Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscattering

نویسندگان

  • M. Vos
  • M. R. Went
چکیده

We demonstrate that high-energy, high-resolution reflection electron energy loss spectroscopy can provide unique insights into interface formation, especially for the case where an extended interface is formed. By changing the geometry and/or electron energy the electronic structure can be probed over a range of thicknesses (from 10s of Å to more than 1000 Å). At the same time one resolves the elastically scattered electrons into different components, corresponding to scattering of atoms with different mass (so-called ‘electron Rutherford backscattering’). Thus these high-energy REELS/elastic scattering experiments obtain information on both the electronic structure and the atomic composition of the overlayer formed. 2007 Elsevier B.V. All rights reserved.

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تاریخ انتشار 2007